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NTTFSS1D1N02P1E

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NTTFSS1D1N02P1E Image

The NTTFSS1D1N02P1E from onsemi is a MOSFET with Continous Drain Current 228 A, Drain Source Resistance 0.85 milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 2 V. Tags: Surface Mount. More details for NTTFSS1D1N02P1E can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTTFSS1D1N02P1E
  • Manufacturer
    onsemi
  • Description
    2 V N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    228 A
  • Drain Source Resistance
    0.85 milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    2 V
  • Gate Charge
    26.3 to 60 nC
  • Power Dissipation
    89 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN9
  • Applications
    DC-DC Switching Applications, ORing Applications, Power Load Switch, Battery Management and Protection

Technical Documents
View details on the manufacturer's website
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