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NTUD3170NZT5G

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The NTUD3170NZT5G from onsemi is a MOSFET with Continous Drain Current 0.28 A, Drain Source Resistance 1000 to 4500 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for NTUD3170NZT5G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTUD3170NZT5G
  • Manufacturer
    onsemi
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.28 A
  • Drain Source Resistance
    1000 to 4500 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Power Dissipation
    0.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-963
  • Applications
    General Purpose Interfacing Switch, Optimized for Power Management in Ultra Portable Equipment, Analog Switch

Technical Documents
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