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NTZD3155CT2G

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The NTZD3155CT2G from onsemi is a MOSFET with Continous Drain Current -0.455 to 0.54 A, Drain Source Resistance 400 to 2000 milliohm, Drain Source Breakdown Voltage -20 to 20 V, Gate Source Voltage -6 to 6 V, Gate Source Threshold Voltage -1 to 1 V. Tags: Surface Mount. More details for NTZD3155CT2G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTZD3155CT2G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.455 to 0.54 A
  • Drain Source Resistance
    400 to 2000 milliohm
  • Drain Source Breakdown Voltage
    -20 to 20 V
  • Gate Source Voltage
    -6 to 6 V
  • Gate Source Threshold Voltage
    -1 to 1 V
  • Gate Charge
    1.5 to 2.5 nC
  • Power Dissipation
    0.25 to 0.28 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-563-6
  • Applications
    DC-DC Conversion Circuits, Load/Power Switching with Level Shift, Single or Dual Cell Li-Ion Battery Operated Systems, High Speed Circuits, Cell Phones, MP3s, Digital Cameras, and PDAs

Technical Documents
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