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NTZD5110NT1G

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The NTZD5110NT1G from onsemi is a MOSFET with Continous Drain Current 0.31 A, Drain Source Resistance 1190 to 2500 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for NTZD5110NT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTZD5110NT1G
  • Manufacturer
    onsemi
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.31 A
  • Drain Source Resistance
    1190 to 2500 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    0.7 nC
  • Power Dissipation
    0.28 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-563
  • Applications
    Load/Power Switches, Driver Circuits: Relays, Lamps, Displays, Memories, Battery Management/Battery Operated Systems, Cell Phones, Digital Cameras, PDAs, Pagers

Technical Documents
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