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NVB6412ANT4G

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NVB6412ANT4G Image

The NVB6412ANT4G from onsemi is a MOSFET with Continous Drain Current 58 A, Drain Source Resistance 15.6 to 18.2 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NVB6412ANT4G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVB6412ANT4G
  • Manufacturer
    onsemi
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    58 A
  • Drain Source Resistance
    15.6 to 18.2 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    73 to 100 nC
  • Power Dissipation
    167 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Motor Control, UPS Inverter

Technical Documents
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