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NVBGS1D2N08H

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The NVBGS1D2N08H from onsemi is a MOSFET with Continous Drain Current 290 A, Drain Source Resistance 1.1 to 1.34 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NVBGS1D2N08H can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVBGS1D2N08H
  • Manufacturer
    onsemi
  • Description
    80 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    290 A
  • Drain Source Resistance
    1.1 to 1.34 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    160 nC
  • Power Dissipation
    259 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK-7L
  • Applications
    Switching Power Supplies, Power switches (High side driver, Low side driver, H-Bridges), 48V systems

Technical Documents
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