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NVCR8LS025N65S3A

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The NVCR8LS025N65S3A from onsemi is a MOSFET with Continous Drain Current 75 A, Drain Source Resistance 19.9 to 34.6 milli-ohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage 30 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Wafer. More details for NVCR8LS025N65S3A can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVCR8LS025N65S3A
  • Manufacturer
    onsemi
  • Description
    30 V, 236 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    10.830 x 7.610 mm
  • Number of Channels
    Single
  • Continous Drain Current
    75 A
  • Drain Source Resistance
    19.9 to 34.6 milli-ohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    30 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    236 nC
  • Power Dissipation
    595 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Wafer
  • Applications
    HV DC/DC converter, On Board Charger

Technical Documents
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