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NVCW4LS001N08HA

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The NVCW4LS001N08HA from onsemi is a MOSFET with Continous Drain Current 351 A, Drain Source Resistance 0.92 to 1.05 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Wafer. More details for NVCW4LS001N08HA can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVCW4LS001N08HA
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 80 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    351 A
  • Drain Source Resistance
    0.92 to 1.05 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    166 nC
  • Power Dissipation
    311 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Wafer

Technical Documents
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