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NVD5117PLT4G

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The NVD5117PLT4G from onsemi is a MOSFET with Continous Drain Current -61 A, Drain Source Resistance 12 to 22 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1.5 V. Tags: Surface Mount. More details for NVD5117PLT4G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVD5117PLT4G
  • Manufacturer
    onsemi
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -61 A
  • Drain Source Resistance
    12 to 22 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1.5 V
  • Gate Charge
    49 to 85 nC
  • Power Dissipation
    118 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-3
  • Applications
    Automotive High Side Drive, Automotive Engine Control, Automotive Body Control, Automotive Infotainment

Technical Documents
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