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NVD5805NT4G-VF01

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The NVD5805NT4G-VF01 from onsemi is a MOSFET with Continous Drain Current 51 A, Drain Source Resistance 7.6 to 16 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 3.5 V. Tags: Surface Mount. More details for NVD5805NT4G-VF01 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVD5805NT4G-VF01
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 33 to 80 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    51 A
  • Drain Source Resistance
    7.6 to 16 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 3.5 V
  • Gate Charge
    33 to 80 nC
  • Power Dissipation
    47 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-3
  • Applications
    LED Backlight Driver, CCFL Backlight, DC Motor Control, Power Supply Secondary Side Synchronous Rectification

Technical Documents
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