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NVGS3130NT1G

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NVGS3130NT1G Image

The NVGS3130NT1G from onsemi is a MOSFET with Continous Drain Current 5.6 A, Drain Source Resistance 19 to 32 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1.4 V. Tags: Surface Mount. More details for NVGS3130NT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVGS3130NT1G
  • Manufacturer
    onsemi
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.6 A
  • Drain Source Resistance
    19 to 32 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1.4 V
  • Gate Charge
    13.2 to 20.3 nC
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP-6
  • Applications
    DC-DC Converters, Lithium Ion Battery Applications, Load/Power Switching MAXIMUM RATINGS (TJ = 2

Technical Documents
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