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NVGS5120PT1G

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The NVGS5120PT1G from onsemi is a MOSFET with Continous Drain Current -2.9 A, Drain Source Resistance 72 to 142 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for NVGS5120PT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVGS5120PT1G
  • Manufacturer
    onsemi
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.9 A
  • Drain Source Resistance
    72 to 142 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    18.1 nC
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP-6
  • Applications
    High Side Load Switch, Power Switch for Printers, Communication Equipment

Technical Documents
View details on the manufacturer's website
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