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NVH050N65S3F

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NVH050N65S3F Image

The NVH050N65S3F from onsemi is a MOSFET with Continous Drain Current 58 A, Drain Source Resistance 42 to 50 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for NVH050N65S3F can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVH050N65S3F
  • Manufacturer
    onsemi
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    58 A
  • Drain Source Resistance
    42 to 50 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    123 nC
  • Power Dissipation
    403 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-3LD
  • Applications
    Automotive On Board Charger HEV-EV, Automotive DC/DC converter for HEV-EV

Technical Documents
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