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NVH4L080N120SC1

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NVH4L080N120SC1 Image

The NVH4L080N120SC1 from onsemi is a MOSFET with Continous Drain Current 29 A, Drain Source Resistance 80 to 162 milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -15 to 25 V, Gate Source Threshold Voltage 1.8 to 4.3 V. Tags: Through Hole. More details for NVH4L080N120SC1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVH4L080N120SC1
  • Manufacturer
    onsemi
  • Description
    1200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    29 A
  • Drain Source Resistance
    80 to 162 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -15 to 25 V
  • Gate Source Threshold Voltage
    1.8 to 4.3 V
  • Gate Charge
    56 nC
  • Power Dissipation
    170 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-4LD
  • Applications
    Automotive Auxiliary Motor Drive, Automotive On Board Charger, Automotive DC-DC Converter for EV/HEV

Technical Documents
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