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NVHL025N065SC1

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The NVHL025N065SC1 from onsemi is an Automotive Qualified N-Channel SiC Power MOSFET that is ideal for automotive onboard chargers and DC-DC converters in EV/EV applications. It has a drain-source breakdown voltage of over 650 V, a gate threshold volta

Product Specifications

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Product Details

  • Part Number
    NVHL025N065SC1
  • Manufacturer
    onsemi
  • Description
    Automotive Qualified N-Channel SiC Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Dimensions
    15.37 x 40.07 mm
  • Number of Channels
    Single
  • Continous Drain Current
    99 A
  • Drain Source Resistance
    28.5 milli-ohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -8 to 22 V
  • Gate Source Threshold Voltage
    2.8 V
  • Gate Charge
    164 nC
  • Power Dissipation
    348 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-3LD
  • Applications
    Automotive On Board Charger, Automotive DC-DC Converter for EV/HEV

Technical Documents
View details on the manufacturer's website
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