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NVJD4152PT1G

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The NVJD4152PT1G from onsemi is a MOSFET with Continous Drain Current -0.88 A, Drain Source Resistance 215 to 1000 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.2 to -0.45 V. Tags: Surface Mount. More details for NVJD4152PT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVJD4152PT1G
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.88 A
  • Drain Source Resistance
    215 to 1000 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.2 to -0.45 V
  • Gate Charge
    2.2 nC
  • Power Dissipation
    0.35 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC-88 (SOT-363)
  • Applications
    Load/Power Management, Charging Circuits, Load Switching, Cell Phones, Computing, Digital Cameras, MP3s and PDAs

Technical Documents
View details on the manufacturer's website
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