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NVLJS053N12MCLTAG

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NVLJS053N12MCLTAG Image

The NVLJS053N12MCLTAG from onsemi is a MOSFET with Continous Drain Current 4.8 A, Drain Source Resistance 42 to 70 milliohm, Drain Source Breakdown Voltage 120 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for NVLJS053N12MCLTAG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVLJS053N12MCLTAG
  • Manufacturer
    onsemi
  • Description
    120 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.8 A
  • Drain Source Resistance
    42 to 70 milliohm
  • Drain Source Breakdown Voltage
    120 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    3.8 to 7.8 nC
  • Power Dissipation
    2.3 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UDFN-6
  • Applications
    Primary DC-DC MOSFET, Synchronous Rectifier in DC-DC and AC-DC, Motor Drive

Technical Documents
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