NVLJWS6D0N04CL

Note : Your request will be directed to onsemi.

NVLJWS6D0N04CL Image

The NVLJWS6D0N04CL from onsemi is a MOSFET with Continous Drain Current 68 A, Drain Source Resistance 4 to 8 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for NVLJWS6D0N04CL can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NVLJWS6D0N04CL
  • Manufacturer
    onsemi
  • Description
    40 V, 10 to 20 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    68 A
  • Drain Source Resistance
    4 to 8 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    10 to 20 nC
  • Power Dissipation
    46 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFNW6

Technical Documents

Latest MOSFETs

View more products