1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. NVMD3P03R2G

NVMD3P03R2G

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

The NVMD3P03R2G from onsemi is a MOSFET with Continous Drain Current -3.05 A, Drain Source Resistance 63 to 125 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for NVMD3P03R2G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NVMD3P03R2G
  • Manufacturer
    onsemi
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.05 A
  • Drain Source Resistance
    63 to 125 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    16 to 25 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8
  • Applications
    DC-DC Converters, Low Voltage Motor Control, Power Management in Portable and Battery-Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products