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NVMD4N03R2G

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NVMD4N03R2G Image

The NVMD4N03R2G from onsemi is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 48 to 80 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for NVMD4N03R2G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMD4N03R2G
  • Manufacturer
    onsemi
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    48 to 80 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    8 to 16 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8
  • Applications
    DC-DC Converters, Computers, Printers, Cellular and Cordless Phones, Disk Drives and Tape Drives

Technical Documents
View details on the manufacturer's website
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