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NVMFD6H846NLT1G

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NVMFD6H846NLT1G Image

The NVMFD6H846NLT1G from onsemi is a MOSFET with Continous Drain Current 31 A, Drain Source Resistance 12.2 to 19 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for NVMFD6H846NLT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMFD6H846NLT1G
  • Manufacturer
    onsemi
  • Description
    80 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    31 A
  • Drain Source Resistance
    12.2 to 19 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    8 to 17 nC
  • Power Dissipation
    34 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN8
  • Applications
    Reverse Battery protection, Power switches (High Side Driver, H-Bridges etc.), Switching power supplies

Technical Documents
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