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NVMFS3D0P04M8LT1G

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The NVMFS3D0P04M8LT1G from onsemi is a MOSFET with Continous Drain Current -183 A, Drain Source Resistance 2.1 to 4.2 milliohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.4 to -1 V. Tags: Surface Mount. More details for NVMFS3D0P04M8LT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMFS3D0P04M8LT1G
  • Manufacturer
    onsemi
  • Description
    -40 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -183 A
  • Drain Source Resistance
    2.1 to 4.2 milliohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.4 to -1 V
  • Gate Charge
    58.7 to 124 nC
  • Power Dissipation
    171 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5
  • Applications
    Reverse Battery protection, Power switches (High Side Driver, Low Side Driver, H-Bridges etc.), Switching power supplies

Technical Documents
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