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NVMFS4C308NT1G

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NVMFS4C308NT1G Image

The NVMFS4C308NT1G from onsemi is a MOSFET with Continous Drain Current 55 A, Drain Source Resistance 4 to 7 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.1 V. Tags: Surface Mount. More details for NVMFS4C308NT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMFS4C308NT1G
  • Manufacturer
    onsemi
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    55 A
  • Drain Source Resistance
    4 to 7 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.1 V
  • Gate Charge
    8.4 to 18.2 nC
  • Power Dissipation
    30.6 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5
  • Applications
    Reverse battery protection, DC-DC converter output driver

Technical Documents
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