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NVMFS5H663NLWFT1G

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The NVMFS5H663NLWFT1G from onsemi is a MOSFET with Continous Drain Current 67 A, Drain Source Resistance 5.8 to 10 mohms, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for NVMFS5H663NLWFT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMFS5H663NLWFT1G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 8 to 17 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    5 x 6 mm
  • Number of Channels
    Single
  • Continous Drain Current
    67 A
  • Drain Source Resistance
    5.8 to 10 mohms
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    8 to 17 nC
  • Power Dissipation
    63 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5

Technical Documents
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