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NVMFS6D1N08HT1G

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The NVMFS6D1N08HT1G from onsemi is a MOSFET with Continous Drain Current 89 A, Drain Source Resistance 4.5 to 5.5 mohms, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NVMFS6D1N08HT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMFS6D1N08HT1G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 10 to 32 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    5 x 6 mm
  • Number of Channels
    Single
  • Continous Drain Current
    89 A
  • Drain Source Resistance
    4.5 to 5.5 mohms
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    10 to 32 nC
  • Power Dissipation
    104 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5
  • Applications
    Synchronous Rectification, AC-DC and DC-DC Power Supplies, AC-DC Adapters (USB PD) SR, Load Switch

Technical Documents
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