1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. NVMFS6H800NWFT1G

NVMFS6H800NWFT1G

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

The NVMFS6H800NWFT1G from onsemi is a MOSFET with Continous Drain Current 203 A, Drain Source Resistance 1.7 to 2.1 mohms, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NVMFS6H800NWFT1G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NVMFS6H800NWFT1G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 85 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    5 x 6 mm
  • Number of Channels
    Single
  • Continous Drain Current
    203 A
  • Drain Source Resistance
    1.7 to 2.1 mohms
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    85 nC
  • Power Dissipation
    200 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFNW5
  • Applications
    Switching power supplies, Power switches (High Side Driver, Low Side Driver, H-Bridges etc.), 48V systems

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products