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NVMFWS9D6P04M8LT1G

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The NVMFWS9D6P04M8LT1G from onsemi is a MOSFET with Continous Drain Current -77 A, Drain Source Resistance 7.15 to 13.8 milli-ohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.4 to -1 V. Tags: Surface Mount. More details for NVMFWS9D6P04M8LT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMFWS9D6P04M8LT1G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 14.47 to 15.04 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -77 A
  • Drain Source Resistance
    7.15 to 13.8 milli-ohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.4 to -1 V
  • Gate Charge
    14.47 to 15.04 nC
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFNW5
  • Applications
    Reverse Battery protection, Power switches (High Side Driver, H-Bridges etc.), Switching power supplies

Technical Documents
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