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NVMJD012N06CLTWG

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The NVMJD012N06CLTWG from onsemi is a MOSFET with Continous Drain Current 42 A, Drain Source Resistance 9.4 to 16.8 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for NVMJD012N06CLTWG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMJD012N06CLTWG
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 11.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    42 A
  • Drain Source Resistance
    9.4 to 16.8 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    11.5 nC
  • Power Dissipation
    42 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK8
  • Applications
    Solenoid driver, Low side / high side driver

Technical Documents
View details on the manufacturer's website
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