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NVMJS0D9N04CTWG

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NVMJS0D9N04CTWG Image

The NVMJS0D9N04CTWG from onsemi is a MOSFET with Continous Drain Current 342 A, Drain Source Resistance 0.68 to 0.81 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NVMJS0D9N04CTWG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMJS0D9N04CTWG
  • Manufacturer
    onsemi
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    342 A
  • Drain Source Resistance
    0.68 to 0.81 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    117 nC
  • Power Dissipation
    180 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK-8
  • Applications
    Reverse Battery protection, Switching power supplies, Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

Technical Documents
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