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NVMJS1D7N06C

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NVMJS1D7N06C Image

The NVMJS1D7N06C from onsemi is a MOSFET with Continous Drain Current 224 A, Drain Source Resistance 1.68 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for NVMJS1D7N06C can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMJS1D7N06C
  • Manufacturer
    onsemi
  • Description
    4 V N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    224 A
  • Drain Source Resistance
    1.68 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    61 nC
  • Power Dissipation
    168.6 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK-8
  • Applications
    Switching Power Supplies, Reverse Battery Protection

Technical Documents
View details on the manufacturer's website
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