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NVMJST1D2N04CTXG

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The NVMJST1D2N04CTXG from onsemi is a MOSFET with Continous Drain Current 451 A, Drain Source Resistance 1.06 to 1.25 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NVMJST1D2N04CTXG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMJST1D2N04CTXG
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 82 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    451 A
  • Drain Source Resistance
    1.06 to 1.25 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    82 nC
  • Power Dissipation
    454 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TCPAK57
  • Applications
    Reverse Battery protection, Power switches (High Side Driver, H-Bridges etc.), Switching power supplies

Technical Documents
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