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NVMYS1D6N04CLTWG

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NVMYS1D6N04CLTWG Image

The NVMYS1D6N04CLTWG from onsemi is a MOSFET with Continous Drain Current 185 A, Drain Source Resistance 1.16 to 2.4 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for NVMYS1D6N04CLTWG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMYS1D6N04CLTWG
  • Manufacturer
    onsemi
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    185 A
  • Drain Source Resistance
    1.16 to 2.4 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    71 nC
  • Power Dissipation
    107.1 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK-4
  • Applications
    Reverse Battery protection, Switching power supplies, Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

Technical Documents
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