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NVMYS2D3N06CTWG

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The NVMYS2D3N06CTWG from onsemi is a MOSFET with Continous Drain Current 171 A, Drain Source Resistance 1.9 to 2.3 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NVMYS2D3N06CTWG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMYS2D3N06CTWG
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 46 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    171 A
  • Drain Source Resistance
    1.9 to 2.3 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    46 nC
  • Power Dissipation
    134.4 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK-4
  • Applications
    Reverse battery protection, Switching Power Supplies, Power Switches - High Side Driver, Low Side Driver, H-Bridges

Technical Documents
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