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NVMYS4D5N04CTWG

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NVMYS4D5N04CTWG Image

The NVMYS4D5N04CTWG from onsemi is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 3.6 to 4.5 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Surface Mount. More details for NVMYS4D5N04CTWG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMYS4D5N04CTWG
  • Manufacturer
    onsemi
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    3.6 to 4.5 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    18 nC
  • Power Dissipation
    55 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK-4
  • Applications
    Reverse Battery protection, Switching power supplies, Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

Technical Documents
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