The NVMYS4D6N06CTWG from onsemi is a MOSFET with Continous Drain Current 92 A, Drain Source Resistance 3.8 to 4.7 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NVMYS4D6N06CTWG can be seen below.