1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. NVMYS7D3N04CLTWG

NVMYS7D3N04CLTWG

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

NVMYS7D3N04CLTWG Image

The NVMYS7D3N04CLTWG from onsemi is a MOSFET with Continous Drain Current 52 A, Drain Source Resistance 6.1 to 12 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for NVMYS7D3N04CLTWG can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NVMYS7D3N04CLTWG
  • Manufacturer
    onsemi
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    52 A
  • Drain Source Resistance
    6.1 to 12 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    7 to nC
  • Power Dissipation
    38 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK-4
  • Applications
    Reverse Battery protection, Switching power supplies, Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products