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NVTFS6H888NLTAG

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The NVTFS6H888NLTAG from onsemi is a MOSFET with Continous Drain Current 14 A, Drain Source Resistance 41 to 67 mohms, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for NVTFS6H888NLTAG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVTFS6H888NLTAG
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 3 to 6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    3.3 x 3.3 mm
  • Number of Channels
    Single
  • Continous Drain Current
    14 A
  • Drain Source Resistance
    41 to 67 mohms
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    3 to 6 nC
  • Power Dissipation
    23 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN-8
  • Applications
    Reverse Battery protection, Power switches (High Side Driver, Low Side Driver, H-Bridges etc.), Switching power supplies

Technical Documents
View details on the manufacturer's website
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