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NVTYS008N06CLTWG

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The NVTYS008N06CLTWG from onsemi is a MOSFET with Continous Drain Current 63 A, Drain Source Resistance 6.2 to 11 mohms, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for NVTYS008N06CLTWG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVTYS008N06CLTWG
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 8 to 17 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    3.3 x 3.3 mm
  • Number of Channels
    Single
  • Continous Drain Current
    63 A
  • Drain Source Resistance
    6.2 to 11 mohms
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    8 to 17 nC
  • Power Dissipation
    56 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK8
  • Applications
    Reverse Battery protection, Power switches (High Side Driver, Low Side Driver, H-Bridges etc.), Switching power supplies

Technical Documents
View details on the manufacturer's website
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