1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. NVTYS9D6P04M8LTWG

NVTYS9D6P04M8LTWG

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

The NVTYS9D6P04M8LTWG from onsemi is a MOSFET with Continous Drain Current -71 A, Drain Source Resistance 7.7 to 16 milliohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for NVTYS9D6P04M8LTWG can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NVTYS9D6P04M8LTWG
  • Manufacturer
    onsemi
  • Description
    -40 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -71 A
  • Drain Source Resistance
    7.7 to 16 milliohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    35 nC
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK8
  • Applications
    Reverse Battery protection, Power switches (High Side Driver, Low Side Driver, H-Bridges etc.), Switching power supplies

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products