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NVVR26A120M1WSS

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The NVVR26A120M1WSS from onsemi is an Automotive Qualified SiC MOSFET Module that is ideal for automotive EV/HEV traction inverter applications. It has a drain-source voltage of up to 1200 V, a gate threshold voltage of 3.2 V, and a drain-source on-res

Product Specifications

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Product Details

  • Part Number
    NVVR26A120M1WSS
  • Manufacturer
    onsemi
  • Description
    1200 V Automotive Qualified SiC MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Continous Drain Current
    400 A
  • Drain Source Resistance
    2.6 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    3.2 V
  • Gate Charge
    1.75 µC
  • Power Dissipation
    1000 W
  • Temperature operating range
    -40 to 175 Degree C
  • Industry
    Automotive
  • Qualification
    AQG324
  • Package Type
    Module
  • Applications
    Automotive EV/HEV- Traction Inverter

Technical Documents
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