1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. RFD12N06RLESM9A

RFD12N06RLESM9A

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

The RFD12N06RLESM9A from onsemi is a MOSFET with Continous Drain Current 18 A, Drain Source Resistance 52 to 75 mohms, Drain Source Breakdown Voltage 50 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for RFD12N06RLESM9A can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RFD12N06RLESM9A
  • Manufacturer
    onsemi
  • Description
    -16 to 16 V, 15 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    18 A
  • Drain Source Resistance
    52 to 75 mohms
  • Drain Source Breakdown Voltage
    50 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    15 nC
  • Power Dissipation
    49 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252AA

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products