RFD16N06LESM9A

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The RFD16N06LESM9A from onsemi is a MOSFET with Continous Drain Current 16 A, Drain Source Resistance 47 mohms, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -8 to 10 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for RFD16N06LESM9A can be seen below.

Product Specifications

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Product Details

  • Part Number
    RFD16N06LESM9A
  • Manufacturer
    onsemi
  • Description
    -8 to 10 V, 62 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    16 A
  • Drain Source Resistance
    47 mohms
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -8 to 10 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    62 nC
  • Power Dissipation
    90 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252AA
  • Applications
    Switching regulators, switching converters, motor drivers

Technical Documents

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