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RFP12N10L

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The RFP12N10L from onsemi is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 200 mohms, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Through Hole. More details for RFP12N10L can be seen below.

Product Specifications

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Product Details

  • Part Number
    RFP12N10L
  • Manufacturer
    onsemi
  • Description
    -10 to 10 V, , N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    200 mohms
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Power Dissipation
    60 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220-3

Technical Documents
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