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S2N7002ET1G

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The S2N7002ET1G from onsemi is a MOSFET with Continous Drain Current 0.19 to 0.31 A, Drain Source Resistance 860 to 3000 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for S2N7002ET1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    S2N7002ET1G
  • Manufacturer
    onsemi
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.19 to 0.31 A
  • Drain Source Resistance
    860 to 3000 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    0.81 nC
  • Power Dissipation
    0.3 to 0.42 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3
  • Applications
    Low Side Load Switch, Level Shift Circuits, DC-DC Converter, Portable Applications i.e. DSC, PDA, Cell Phone

Technical Documents
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