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SI4435DY

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The SI4435DY from onsemi is a MOSFET with Continous Drain Current -8.8 A, Drain Source Resistance 15 to 35 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for SI4435DY can be seen below.

Product Specifications

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Product Details

  • Part Number
    SI4435DY
  • Manufacturer
    onsemi
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -8.8 A
  • Drain Source Resistance
    15 to 35 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    17 to 24 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8
  • Applications
    Power management, Load switch, Battery protection

Technical Documents
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