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FC6B21100L

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The FC6B21100L from Panasonic Corporation is a MOSFET with Drain Source Resistance 3.4 to 11 milliohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage 8 V, Gate Source Threshold Voltage 0.35 to 1.4 V, Gate Charge 42 nC. Tags: Chip. More details for FC6B21100L can be seen below.

Product Specifications

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Product Details

  • Part Number
    FC6B21100L
  • Manufacturer
    Panasonic Corporation
  • Description
    8 V, Dual, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Drain Source Resistance
    3.4 to 11 milliohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    8 V
  • Gate Source Threshold Voltage
    0.35 to 1.4 V
  • Gate Charge
    42 nC
  • Power Dissipation
    0.45 W
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Package
    CSP

Technical Documents
View details on the manufacturer's website
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