FC6B22220L

Note : Your request will be directed to Panasonic Corporation.

The FC6B22220L from Panasonic Corporation is a MOSFET with Continous Drain Current 13 A, Drain Source Resistance 5.7 to 22.5 Milliohm, Drain Source Breakdown Voltage 24 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.4 to 1.4 V. Tags: Chip. More details for FC6B22220L can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FC6B22220L
  • Manufacturer
    Panasonic Corporation
  • Description
    24 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    13 A
  • Drain Source Resistance
    5.7 to 22.5 Milliohm
  • Drain Source Breakdown Voltage
    24 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.4 to 1.4 V
  • Gate Charge
    27.6 nC
  • Power Dissipation
    2.1 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Applications
    Lithium-ion Battery Protection

Technical Documents

Latest MOSFETs

View more products