1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Panasonic Corporation
  6. FCAB21350L

FCAB21350L

Download Datasheet Request Quote

Note : Your request will be directed to Panasonic Corporation.

The FCAB21350L from Panasonic Corporation is a MOSFET with Drain Source Resistance 1.55 to 6.1 milliohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage 8 V, Gate Source Threshold Voltage 0.35 to 1.4 V, Gate Charge 43 nC. Tags: Chip. More details for FCAB21350L can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FCAB21350L
  • Manufacturer
    Panasonic Corporation
  • Description
    8 V, Dual, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Drain Source Resistance
    1.55 to 6.1 milliohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    8 V
  • Gate Source Threshold Voltage
    0.35 to 1.4 V
  • Gate Charge
    43 nC
  • Power Dissipation
    0.45 to 2.1 W
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Package
    CSP

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products