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FCAB21910L

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The FCAB21910L from Panasonic Corporation is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 2.4 to 6.95 Milliohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 1.3 to 2.35 V. Tags: Chip. More details for FCAB21910L can be seen below.

Product Specifications

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Product Details

  • Part Number
    FCAB21910L
  • Manufacturer
    Panasonic Corporation
  • Description
    12 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    2.4 to 6.95 Milliohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    1.3 to 2.35 V
  • Gate Charge
    20 nC
  • Power Dissipation
    3 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Applications
    Lithium-ion Battery Protection

Technical Documents
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