1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Panasonic Corporation
  6. FCAB22620L

FCAB22620L

Download Datasheet Request Quote

Note : Your request will be directed to Panasonic Corporation.

The FCAB22620L from Panasonic Corporation is a MOSFET with Continous Drain Current 33 A, Drain Source Resistance 1.6 to 9.8 Milliohm, Drain Source Breakdown Voltage 23 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.35 to 1.4 V. Tags: Chip. More details for FCAB22620L can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FCAB22620L
  • Manufacturer
    Panasonic Corporation
  • Description
    23 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    33 A
  • Drain Source Resistance
    1.6 to 9.8 Milliohm
  • Drain Source Breakdown Voltage
    23 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.35 to 1.4 V
  • Gate Charge
    29 nC
  • Power Dissipation
    3.5 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Applications
    Lithium-ion Battery Protection

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products